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| HSM221C Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-028C (Z) Rev. 3 Features * Low capacitance, proof against high voltage. * Fast recovery time. * MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM221C Laser Mark A2 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HSM221C Absolute Maximum Ratings (Ta = 25C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Tj Tstg Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA C C Electrical Characteristics (Ta = 25C) Item Forward voltage Symbol VF1 VF2 VF3 Reverse current Capacitance Reverse recovery time IR C t rr Min -- -- -- -- -- -- Typ 0.76 0.88 0.97 -- 0.5 -- Max 1.0 1.0 1.2 0.1 2.0 3.0 A pF ns Unit V Test Condition I F = 10mA I F = 50mA I F = 100mA VR = 80V VR = 0V, f = 1MHz I F = 10mA, VR = 6V, RL = 50 HSM221C 10 -1 Forward current I F (A) 10 -2 10 -3 =7 5C 10 -5 10 -6 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) Ta 10 Ta -4 Ta =2 5C =- 25 C 1.0 Fig.1 Forward current Vs. Forward voltage -4 10 10 Reverse current I R (A) -5 10 10 10 10 10 -6 Ta = 75C -7 Ta = 50C Ta = 25C -8 -9 Ta = 0C Ta = -25C -10 10 -11 0 60 80 20 40 Reverse voltage VR (V) 100 Fig.2 Reverse current Vs. Reverse voltage HSM221C f = 1MHz 10 Capacitance C (pF) 1.0 10 -1 1.0 10 Reverse voltage VR (V) 102 Fig.3 Capacitance Vs. Reverse voltage HSM221C Package Dimensions Unit: mm 0.65 - 0.3 + 0.1 Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 A2 1.9 0.3 2.8 + 0.1 - 1.5 0 - 0.10 1 NC 2 Anode 3 Cathode 0.3 HITACHI Code 1.1 - 0.1 + 0.2 MPAK(1) -- SC-59A 0.011 JEDEC Code EIAJ Code Weight (g) |
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